Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer.
Silicon nanowires (SiNWs) have been synthesized by plasma enhanced chemical vapor deposition (PECVD) at different power for generation of plasma and different flow rate of silane gas. Silane (10% SiH4 in Ar) gas with flow rate ranging between 6-15 standard cubic centimeter per minute(sccm) were employed as the source and gold colloid as the catalyst. A p-type Si (100) wafer was used as substrate in this experiment and the substrate’s temperature was 370°C.The plasma power range was 12-17 watts. The grown silicon nanowires were analyzed using field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX). FESEM results show that some silicon nanowires are cone like and some of them are cylindrical. The EDX result revealed that the existence of silicon and oxygen elements in the nanowires. The silicon nanowires obtained have different diameters and lengths and the SiNWs consist of silicon core which are surrounded by oxide sheath. It has been found that the plasma power and flow rate of the silane gas influence the size of silicon nananowires growth by PECVD. The diameter of wires decreased from 140 nm to 80 nm averagely when plasma power was increased from 12 to 17 watts. The diameter also increased about 90 nm to 150 nm when the flow rate of silane gas is increased from 6 to 15 sccm.
One-dimensional nanostructure materials are very attractive because of their electronic and optical properties depending on their size. It is well known that properties of material can be tuned by reducing size to nanoscale because at the small sizes, that they behave differently with its bulk materials and the band gap will control by the size. The tunability of the band gap makes nanostructured materials useful for many applications. As one of the wide band gaps semiconductor compounds, zinc selenide (ZnSe) nanostructures (nanoparticles, nanowires, nanorods) have received much attention for the application in optoelectronic devices, such as blue laser diode, light emitting diodes, solar cells and IR optical windows. In this study, ZnSe nanostructures have been synthesized by reduction process of zinc selenate using hydrazine hydrate (N2H4.2H2O). The reductive agent of hydrazine hydrate was added to the starting materials of zinc selenate were heat treated at 500 o C for 1 hour under argon flow to form onedimensional nanostructures. The SEM and TEM images show the formation of nanocompositelike structures, which some small nanobars and nanopellets stick to the rod. The x-ray diffraction and elemental composition analysis confirm the formation of mixture zinc oxide and zinc selenide phases.