Magnetoactive (MA) foam, with its tunable mechanical properties and magnetostriction, has the potential to be used for the development of soft sensor technology. However, researchers have found that its mechanical properties and magnetostriction are morphologically dependent, thereby limiting its capabilities for dexterous manipulation. Thus, in this work, MA foam was developed with additional capabilities for controlling its magnetostriction, normal force, storage modulus, shear stress and torque by manipulating the concentration of carbonyl iron particles (CIPs) and the magnetic field with regard to morphological changes. MA foams were prepared with three weight percentages of CIPs, namely, 35 wt.%, 55 wt.% and 75 wt.%, and three different modes, namely, zero shear, constant shear and various shears. The results showed that the MA foam with 75 wt.% of CIPs enhanced the normal force sensitivity and positive magnetostriction sensitivity by up to 97% and 85%, respectively. Moreover, the sensitivities of the storage modulus, torque and shear stress were 8.97 Pa/mT, 0.021 µN/mT, and 0.0096 Pa/mT, respectively. Meanwhile, the magnetic dipolar interaction between the CIPs was capable of changing the property of MA foam from a positive to a negative magnetostriction under various shear strains with a low loss of energy. Therefore, it is believed that this kind of highly sensitive MA foam can potentially be implemented in future soft sensor systems.
The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of relaxation processes that occurs during the cooling step while countering the tensile stresses due to the contrast of thermal expansion coefficient between GaN and Si(111) substrate. Here, we inaugurate the pulse atomic-layer epitaxy (PALE) AlN layer to reinforce the buffer layer to achieve a thick GaN epilayer which is crucial for high performance power devices. The characteristics of grown GaN on Si substrate based on PALE AlN thickness of 0 ~ 100 nm are investigated along with microstructural evolution between AlN NL and composition-graded AlGaN buffer layer. PALE AlN layer deposited with an optimum thickness of 50 nm and above was observed to exhibit a highly uniform coalesced GaN epilayer surface with root-mean square (RMS) roughness of 0.512 nm. The thickness of the PALE AlN layer substantially affected the crystallinity of the top GaN epilayer where the lowest value for symmetric (0 0 0 2) and asymmetric (1 0 -1 2) x-ray rocking curve analysis were achieved, indicating the reduction of threading dislocation density in the growth structure. Transition of the E2 (high) peak from the Raman spectrum shows that the strain compression in GaN epilayer is directly proportional to the thickness of the PALE AlN layer.