This paper reports the utilization of ZnO nanorod arrays (NRAs) doped with various concentrations of Ga (0, 0.5, 1, 2, and 3 at %) as electron acceptors in organic solar cells. The donor, poly(3-hexylthiophene) (P3HT), was spin coated onto Ga-doped ZnO NRAs that were grown on fluorine-doped tin oxide (FTO) substrates, followed by the deposition of a Ag electrode by a magnetron sputtering method. Adjusting the Ga precursor concentration allowed for the control of the structural and optical properties of ZnO NRAs. The short circuit current density increased with increasing Ga concentration from 0 to 1 at %, mainly because of improved exciton dissociation and increased charge extraction. Meanwhile, the reduced charge recombination and lower hole leakage current led to an increase in the open circuit voltage with Ga concentrations up to 1 at %. The device with the optimum Ga concentration of 1 at % exhibited power conversion efficiency nearly three times higher compared to the device without Ga doping. This finding suggests that the incorporation of Ga can be a simple and effective approach to improve the photovoltaic performance of organic solar cells.
Wearable energy storage devices require high mechanical stability and high-capacitance flexible electrodes. In this study, we design a flexible supercapacitor electrode consisting of 1-dimensional carbon nanotubes (CNT), cellulose nanofibrils (CNF), and manganese dioxide nanowires (MnO2 NWs). The flexible and conductive CNT/CNF-MnO2 NWs suspension was first prepared via ultrasonic dispersion approach, followed by vacuum filtration and hot press to form the composite paper electrode. The morphological studies show entanglement between CNT and CNF, which supports the mechanical properties of the composite. The CNT/CNF-MnO2 NWs electrode exhibits lower resistance when subjected to various bending angles (-120-+120°) compared to the CNT/CNF electrode. In addition, the solid-state supercapacitor also shows a high energy density of 38 μWh cm-2 and capacitance retention of 83.2% after 5000 cycles.
Anion passivation effect on metal-oxide nano-architecture offers a highly controllable platform for improving charge selectivity and extraction, with direct relevance to their implementation in hybrid solar cells. In current work, we demonstrated the incorporation of fluorine (F) as an anion dopant to address the defect-rich nature of ZnO nanorods (ZNR) and improve the feasibility of its role as electron acceptor. The detailed morphology evolution and defect engineering on ZNR were studied as a function of F-doping concentration (x). Specifically, the rod-shaped arrays of ZnO were transformed into taper-shaped arrays at high x. A hypsochromic shift was observed in optical energy band gap due to the Burstein-Moss effect. A substantial suppression on intrinsic defects in ZnO lattice directly epitomized the novel role of fluorine as an oxygen defect quencher. The results show that 10-FZNR/P3HT device exhibited two-fold higher power conversion efficiency than the pristine ZNR/P3HT device, primarily due to the reduced Schottky defects and charge transfer barrier. Essentially, the reported findings yielded insights on the functions of fluorine on (i) surface -OH passivation, (ii) oxygen vacancies (Vo) occupation and (iii) lattice oxygen substitution, thereby enhancing the photo-physical processes, carrier mobility and concentration of FZNR based device.