Displaying publications 1 - 20 of 21 in total

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  1. Fulltext Structural and photoluminescence studies on catalytic growth of silicon/zinc oxide heterostructure nanowires
    Chong SK, Dee CF, Abdul Rahman S
    Nanoscale Res Lett, 2013;8(1):174.
    PMID: 23590803 DOI: 10.1186/1556-276X-8-174
    Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.
  2. Fulltext Hierarchical Si/ZnO trunk-branch nanostructure for photocurrent enhancement
    Dee CF, Chong SK, Rahman SA, Omar FS, Huang NM, Majlis BY, et al.
    Nanoscale Res Lett, 2014;9(1):469.
    PMID: 25246872 DOI: 10.1186/1556-276X-9-469
    Hierarchical Si/ZnO trunk-branch nanostructures (NSs) have been synthesized by hot wire assisted chemical vapor deposition method for trunk Si nanowires (NWs) on indium tin oxide (ITO) substrate and followed by the vapor transport condensation (VTC) method for zinc oxide (ZnO) nanorods (NRs) which was laterally grown from each Si nanowires (NWs). A spin coating method has been used for zinc oxide (ZnO) seeding. This method is better compared with other group where they used sputtering method for the same process. The sputtering method only results in the growth of ZnO NRs on top of the Si trunk. Our method shows improvement by having the growth evenly distributed on the lateral sides and caps of the Si trunks, resulting in pine-leave-like NSs. Field emission scanning electron microscope image shows the hierarchical nanostructures resembling the shape of the leaves of pine trees. Single crystalline structure for the ZnO branch grown laterally from the crystalline Si trunk has been identified by using a lattice-resolved transmission electron microscope. A preliminary photoelectrochemical (PEC) cell testing has been setup to characterize the photocurrent of sole array of ZnO NR growth by both hydrothermal-grown (HTG) method and VTC method on ITO substrates. VTC-grown ZnO NRs showed greater photocurrent effect due to its better structural properties. The measured photocurrent was also compared with the array of hierarchical Si/ZnO trunk-branch NSs. The cell with the array of Si/ZnO trunk-branch NSs revealed four-fold magnitude enhancement in photocurrent density compared with the sole array of ZnO NRs obtain from VTC processes.
  3. Fulltext A Theoretical Study of Surface Mode Propagation with a Guiding Layer of GaN/Sapphire Hetero-Structure in Liquid Medium
    Mohd Razip Wee MF, Jaafar MM, Faiz MS, Dee CF, Yeop Majlis B
    Biosensors (Basel), 2018 Dec 05;8(4).
    PMID: 30563159 DOI: 10.3390/bios8040124
    Gallium Nitride (GaN) is considered as the second most popular semiconductor material in industry after silicon. This is due to its wide applications encompassing Light Emitting Diode (LED) and power electronics. In addition, its piezoelectric properties are fascinating to be explored as electromechanical material for the development of diverse microelectromechanical systems (MEMS) application. In this article, we conducted a theoretical study concerning surface mode propagation, especially Rayleigh and Sezawa mode in the layered GaN/sapphire structure with the presence of various guiding layers. It is demonstrated that the increase in thickness of guiding layer will decrease the phase velocities of surface mode depending on the material properties of the layer. In addition, the Q-factor value indicating the resonance properties of surface mode appeared to be affected with the presence of fluid domain, particularly in the Rayleigh mode. Meanwhile, the peak for Sezawa mode shows the highest Q factor and is not altered by the presence of fluid. Based on these theoretical results using the finite element method, it could contribute to the development of a GaN-based device to generate surface acoustic wave, especially in Sezawa mode which could be useful in acoustophoresis, lab on-chip and microfluidics applications.
  4. State-of-the-Art on Functional Titanium Dioxide-Integrated Nano-Hybrids in Electrical Biosensors
    Nadzirah S, Gopinath SCB, Parmin NA, Hamzah AA, Mohamed MA, Chang EY, et al.
    Crit Rev Anal Chem, 2020 Sep 30.
    PMID: 32997522 DOI: 10.1080/10408347.2020.1816447
    Biosensors operating based on electrical methods are being accelerated toward rapid and efficient detection that improve the performance of the device. Continuous study in nano- and material-sciences has led to the inflection with properties of nanomaterials that fit the trend parallel to the biosensor evolution. Advancements in technology that focuses on nano-hybrid are being used to develop biosensors with better detection strategies. In this sense, titanium dioxide (TiO2) nanomaterials have attracted extensive interest in the construction of electrical biosensors. The formation of TiO2 nano-hybrid as an electrical transducing material has revealed good results with high performance. The modification of the sensing portion with a combination (nano-hybrid form) of nanomaterials has produced excellent sensors in terms of stability, reproducibility, and enhanced sensitivity. This review highlights recent research advancements with functional TiO2 nano-hybrid materials, and their victorious story in the construction of electrical biosensors are discussed. Future research directions with commercialization of these devices and their extensive utilizations are also discussed.
  5. Fulltext Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor
    Sihar N, Tiong TY, Dee CF, Ooi PC, Hamzah AA, Mohamed MA, et al.
    Nanoscale Res Lett, 2018 May 15;13(1):150.
    PMID: 29766297 DOI: 10.1186/s11671-018-2566-6
    We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm2). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.
  6. Curvature contribution on anodic aluminium oxide pore formation: a detailed analytical study
    Tiong TY, Ooi L, Dee CF, Hamzah AA, Majlis BY
    Nanotechnology, 2018 Oct 26;29(43):435601.
    PMID: 30084385 DOI: 10.1088/1361-6528/aad884
    Anodic aluminium oxide (AAO) is a self-organised nanopore that has been widely studied due to the ease of its synthesization and pore properties manipulation. However, pore growth behaviour under different geometrical surfaces is rarely studied, particularly on the effect of combined curved surfaces towards pore growth properties, which is crucial in designing unique porous platform for specific applications. This paper reports study on the decisive effect of curvature surfaces on development of pore structure and properties at a constant potential. In this work, AAO grown on treated convex and concave surfaces were analysed in terms of pore quantity, pore diameter, interpore distance, pore length and other parameters of pore bottom geometry in conjugation with observation of pore cessation, bifurcation, bending and tapering. The unique formation of tapered pore was observed and described. Major factors deciding pore properties under curved surfaces were identified and discussed. We introduced a new parameter for surface quantification known as central inscribed angle, which was identified to be the central factor which decides pore growth behaviour under a curvature. Here, we observed a different trend in growth rate of pores under different curvatures, which oppose the commonly accepted convex > planar > concave pattern. Levelling height was later identified to be the decisive factor in determining growth rate of pores under a curvature at different geometrical location. These findings open up possibility to precisely control and tailor the growing path and pore structures of AAO simply via anodising an Al sheet under combined curvature surfaces, which could be beneficial for future novel applications.
  7. Fulltext Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition
    Alizadeh M, Binti Hamzan N, Ooi PC, Bin Omar MF, Dee CF, Goh BT
    Materials (Basel), 2019 Feb 24;12(4).
    PMID: 30813502 DOI: 10.3390/ma12040674
    This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.
  8. Titanium dioxide-mediated resistive nanobiosensor for E. coli O157:H7
    Nadzirah S, Hashim U, Gopinath SCB, Parmin NA, Hamzah AA, Yu HW, et al.
    Mikrochim Acta, 2020 03 17;187(4):235.
    PMID: 32185529 DOI: 10.1007/s00604-020-4214-y
    A titanium dioxide nanoparticle (TiO2 NP)-mediated resistive biosensor is described for the determination of DNA fragments of Escherichia coli O157:H7 (E. coli O157:H7). The sol-gel method was used to synthesize the TiO2 NP, and microlithography was applied to fabricate the interdigitated sensor electrodes. Conventional E. coli DNA detections are facing difficulties in long-preparation-and-detection-time (more than 3 days). Hence, electronic biosensor was introduced by measuring the current-voltage (I-V) DNA probe without amplification of DNA fragments. The detection scheme is based on the interaction between the electron flow on the sensor and the introduction of negative charges from DNA probe and target DNA. The biosensor has a sensitivity of 1.67 × 1013 Ω/M and a wide analytical range. The limit detection is down to 1 × 10-11 M of DNA. The sensor possesses outstanding repeatability and reproducibility and is cabable to detect DNA within 15 min in a minute-volume sample (1 μL). Graphical abstract Fig. (a) Graphical illustration of electronic biosensor set up and (b) relationship between limit of detection (LOD) and the unaffected poultry samples on E. coli O157:H7.
  9. Fulltext Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
    Wang C, Chen YC, Hsu HT, Tsao YF, Lin YC, Dee CF, et al.
    Materials (Basel), 2021 Nov 01;14(21).
    PMID: 34772078 DOI: 10.3390/ma14216558
    In this work, a low-power plasma oxidation surface treatment followed by Al2O3 gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (Vth) of 0.13 V and a maximum transconductance (gm) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al2O3 layer with a smooth surface which also suppressed the current collapse phenomenon.
  10. Fulltext Structure deformation of indium oxide from nanoparticles into nanostructured polycrystalline films by in situ thermal radiation treatment
    Chong SK, Azizan SN, Chan KW, Nguyen HQ, Chiu WS, Aspanut Z, et al.
    Nanoscale Res Lett, 2013;8(1):428.
    PMID: 24134646 DOI: 10.1186/1556-276X-8-428
    A microstructure deformation of indium oxide (In2O3) nanoparticles by an in situ thermal radiation treatment in nitrous oxide plasma was investigated. The In2O3 nanoparticles were completely transformed into nanostructured In2O3 films upon 10 min of treatment time. The treated In2O3 nanoparticle sample showed improvement in crystallinity while maintaining a large surface area of nanostructure morphology. The direct transition optical absorption at higher photon energy and the electrical conductivity of the In2O3 nanoparticles were significantly enhanced by the treatment.
  11. Tunable Spectrum Selectivity for Multiphoton Absorption with Enhanced Visible Light Trapping in ZnO Nanorods
    Tan KH, Lim FS, Toh AZY, Zheng XX, Dee CF, Majlis BY, et al.
    Small, 2018 May;14(20):e1704053.
    PMID: 29665226 DOI: 10.1002/smll.201704053
    Observation of visible light trapping in zinc oxide (ZnO) nanorods (NRs) correlated to the optical and photoelectrochemical properties is reported. In this study, ZnO NR diameter and c-axis length respond primarily at two different regions, UV and visible light, respectively. ZnO NR diameter exhibits UV absorption where large ZnO NR diameter area increases light absorption ability leading to high efficient electron-hole pair separation. On the other hand, ZnO NR c-axis length has a dominant effect in visible light resulting from a multiphoton absorption mechanism due to light reflection and trapping behavior in the free space between adjacent ZnO NRs. Furthermore, oxygen vacancies and defects in ZnO NRs are associated with the broad visible emission band of different energy levels also highlighting the possibility of the multiphoton absorption mechanism. It is demonstrated that the minimum average of ZnO NR c-axis length must satisfy the linear regression model of Z p,min = 6.31d to initiate the multiphoton absorption mechanism under visible light. This work indicates the broadening of absorption spectrum from UV to visible light region by incorporating a controllable diameter and c-axis length on vertically aligned ZnO NRs, which is important in optimizing the design and functionality of electronic devices based on light absorption mechanism.
  12. Fulltext Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer
    Ooi PC, Mohammad Haniff MAS, Mohd Razip Wee MF, Goh BT, Dee CF, Mohamed MA, et al.
    Sci Rep, 2019 May 01;9(1):6761.
    PMID: 31043694 DOI: 10.1038/s41598-019-43279-3
    In the interest of the trend towards miniaturization of electronic gadgets, this study demonstrates a high-density data storage device with a very simple three-stacking layer consisting of only one charge trapping layer. A simple solution-processed technique has been used to fabricate the tristable non-volatile memory. The three-stacking layer was constructed in between two metals to form a two-terminal metal-insulator-metal structure. The fabricated device showed a large multilevel memory hysteresis window with a measured ON/OFF current ratio of 107 that might be attributed to the high charge trapped in molybdenum disulphide (MoS2) flakes-graphene quantum dots (GQDs) heterostructure. Transmission electron microscopy was performed to examine the orientation of MoS2-GQD and mixture dispersion preparation method. The obtained electrical data was used further to speculate the possible transport mechanisms through the fabricated device by a curve fitting technique. Also, endurance cycle and retention tests were performed at room temperature to investigate the stability of the device.
  13. Fulltext Developing Conductive Highly Ordered Zinc Oxide Nanorods by Acetylacetonate-Assisted Growth
    A Karim SS, Takamura Y, Tue PT, Tung NT, Kazmi J, Dee CF, et al.
    Materials (Basel), 2020 Mar 04;13(5).
    PMID: 32143385 DOI: 10.3390/ma13051136
    Highly ordered vertically grown zinc oxide nanorods (ZnO NRs) were synthesized on ZnO-coated SiO2/Si substrate using zinc acetylacetonate hydrate as a precursor via a simple hydrothermal method at 85 °C. We used 0.05 M of ZnO solution to facilitate the growth of ZnO NRs and the immersion time was varied from 0.5 to 4 h. The atomic force microscopy revealed the surface roughness of ZnO seed layer used to grow the ZnO NRs. The morphology of vertically grown ZnO NRs was observed by field emission scanning electron microscopy. X-ray diffraction examination and transmission electron microscopy confirmed that the structure of highly ordered ZnO NRs was crystalline with a strong (002) peak corresponded to ZnO hexagonal wurtzite structure. The growth of highly ordered ZnO NRs was favorable due to the continuous supply of Zn2+ ions and chelating agents properties obtained from the acetylacetonate-derived precursor during the synthesis. Two-point probe current-voltage measurement and UV-vis spectroscopy of the ZnO NRs indicated a resistivity and optical bandgap value of 0.44 Ω.cm and 3.35 eV, respectively. The photoluminescence spectrum showed a broad peak centered at 623 nm in the visible region corresponded to the oxygen vacancies from the ZnO NRs. This study demonstrates that acetylacetonate-derived precursors can be used for the production of ZnO NRs-based devices with a potential application in biosensors.
  14. Fulltext Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon
    Abdul Razak NE, Dee CF, Madhuku M, Ahmad I, Chang EY, Yu HW, et al.
    Materials (Basel), 2023 Mar 02;16(5).
    PMID: 36903185 DOI: 10.3390/ma16052070
    The super enhancement of silicon band edge luminescence when co-implanted with boron and carbon is reported. The role of boron in the band edge emissions in silicon was investigated by deliberately introducing defects into the lattice structures. We aimed to increase the light emission intensity from silicon by boron implantation, leading to the formation of dislocation loops between the lattice structures. The silicon samples were doped with a high concentration of carbon before boron implantation and then annealed at a high temperature to activate the dopants into substitutional lattice sites. Photoluminescence (PL) measurements were performed to observe the emissions at the near-infrared region. The temperatures were varied from 10 K to 100 K to study the effect of temperature on the peak luminescence intensity. Two main peaks could be seen at ~1112 and 1170 nm by observing the PL spectra. The intensities shown by both peaks in the samples incorporated with boron are significantly higher than those in pristine silicon samples, and the highest intensity in the former was 600 times greater than that in the latter. Transmission electron microscopy (TEM) was used to study the structure of post-implant and post-anneal silicon sample. The dislocation loops were observed in the sample. Through a technique compatible with mature silicon processing technology, the results of this study will greatly contribute to the development of all Si-based photonic systems and quantum technologies.
  15. Fulltext A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
    Weng YC, Lin YC, Hsu HT, Kao ML, Huang HY, Ueda D, et al.
    Materials (Basel), 2022 Jan 18;15(3).
    PMID: 35160649 DOI: 10.3390/ma15030703
    An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.
  16. Fulltext Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer
    Jaafar MM, Mohd Razip Wee MF, Nguyen HT, Hieu LT, Rai R, Sahoo AK, et al.
    Sensors (Basel), 2023 Feb 23;23(5).
    PMID: 36904668 DOI: 10.3390/s23052464
    Gallium nitride (GaN), widely known as a wide bandgap semiconductor material, has been mostly employed in high power devices, light emitting diodes (LED), and optoelectronic applications. However, it could be exploited differently due to its piezoelectric properties, such as its higher SAW velocity and strong electromechanical coupling. In this study, we investigated the affect of the presence of a guiding layer made from titanium/gold on the surface acoustic wave propagation of the GaN/sapphire substrate. By fixing the minimum thickness of the guiding layer at 200 nm, we could observe a slight frequency shift compared to the sample without a guiding layer, with the presence of different types of surface mode waves (Rayleigh and Sezawa). This thin guiding layer could be efficient in transforming the propagation modes, acting as a sensing layer for the binding of biomolecules to the gold layer, and influencing the output signal in terms of frequency or velocity. The proposed GaN/sapphire device integrated with a guiding layer could possibly be used as a biosensor and in wireless telecommunication applications.
  17. Fulltext Development of DNA-Based Lateral Flow Assay for Detection of LDLR Gene Mutation for Familial Hypercholesterolemia
    Saidi LK, Md Rani ZZ, Sulaiman SA, Jamal R, Ismail A, Alim AA, et al.
    Malays J Med Sci, 2024 Jun;31(3):92-106.
    PMID: 38984253 DOI: 10.21315/mjms2024.31.3.6
    BACKGROUND: The techniques for detecting single nucleotide polymorphisms (SNP) require lengthy and complex experimental procedures and expensive instruments that may only be available in some laboratories. Thus, a deoxyribonucleic acid (DNA)-based lateral flow assay (LFA) was developed as a point-of-care test (POCT) diagnostic tool for genotyping. In this study, single nucleotide variation (E101K) in the low-density lipoprotein receptor (LDLR) gene leading to familial hypercholesterolemia (FH) was chosen as a model.

    METHODS: Hypercholesterolemic individuals (n = 103) were selected from the Malaysian Cohort project (UKM Medical Molecular Biology Institute) while the control samples were selected from the Biobank (UKM Medical Molecular Biology Institute). The DNA samples were isolated from whole blood. Polymerase chain reaction (PCR) amplification process was performed using bifunctional labelled primers specifically designed to correspond to the variant that differentiates wild-type and mutant DNA for visual detection on LFA. The variant was confirmed using Sanger sequencing, and the sensitivity and specificity of the LFA detection method were validated using the Agena MassARRAY® technique.

    RESULTS: Out of 103 hypercholesterolemic individuals, 5 individuals (4.8%) tested positive for E101K, LDLR mutation and the rest, including healthy control individuals, tested negative. This result was concordant with Sanger sequencing and Agena MassARRAY®. These five individuals could be classified as Definite FH, as the DNA diagnosis was confirmed. The sensitivity and specificity of the variant detection by LFA is 100% compared to results using the genotyping method using Agena MassARRAY®.

    CONCLUSION: The developed LFA can potentially be used in the POC setting for detecting the E101K variant in the LDLR gene. This LFA can also be used to screen family members with E101K variant in the LDLR gene and is applicable for other SNP's detection.

  18. Potentials of MicroRNA in Early Detection of Ovarian Cancer by Analytical Electrical Biosensors
    Parmin NA, Hashim U, Gopinath SCB, Nadzirah S, Salimi MN, Voon CH, et al.
    Crit Rev Anal Chem, 2021 Jun 07.
    PMID: 34092138 DOI: 10.1080/10408347.2021.1890543
    The importance of nanotechnology in medical applications especially with biomedical sensing devices is undoubted. Several medical diagnostics have been developed by taking the advantage of nanomaterials, especially with electrical biosensors. Biosensors have been predominantly used for the quantification of different clinical biomarkers toward detection, screening, and follow-up the treatment. At present, ovarian cancer is one of the severe complications that cannot be identified until it becomes most dangerous as the advanced stage. Based on the American Cancer Society, 20% of cases involved in the detection of ovarian cancer are diagnosed at an early stage and 80% diagnosed at the later stages. The patient just has a common digestive problem and stomach ache as early symptoms and people used to ignore these symptoms. Micro ribonucleic acid (miRNA) is classified as small non-coding RNAs, their expressions change due to the association of cancer development and progression. This article reviews and discusses on the currently available strategies for the early detection of ovarian cancers using miRNA as a biomarker associated with electrical biosensors. A unique miRNA-based biomarker detections are specially highlighted with biosensor platforms to diagnose ovarian cancer.
  19. Stress and Deformation of Optimally Shaped Silicon Microneedles for Transdermal Drug Delivery
    Zainal Abidin HE, Ooi PC, Tiong TY, Marsi N, Ismardi A, Mohd Noor M, et al.
    J Pharm Sci, 2020 Aug;109(8):2485-2492.
    PMID: 32380181 DOI: 10.1016/j.xphs.2020.04.019
    In this study, we demonstrated the fabrication of the concave conic shape microneedle with the aid of COMSOL Multiphysics simulation. The stress and buckling of the microneedle structure were simulated by applying various loads ranging from 50 to 800 g perpendiculars to the tip in order to predict the occurrence of microneedles structure deformation. The simulation study indicated that the surface buckling deformation does not occur to the microneedle structure with the increment of the load. The microneedles with dimensions of height and diameter tip ranging from 60 to 100 μm and 1 to 4 μm, respectively had been fabricated via an etching process in a mixture of hydrofluoric acid, nitric acid, and acetic acid. Three optimized microneedles but different in the structures were fabricated via the acidic etching process. The reproducibility of 3 different microneedle structures was 15, 20, and 60%, respectively. Stress and buckling analyses of the fabricated microneedles were further carried out on the rat skin. The obtained experimental results show promising applications for the deep dermis, stratum corneum to epidermis layer penetration.
  20. Fulltext Exploration of 2D Ti3C2 MXene for all solution processed piezoelectric nanogenerator applications
    Auliya RZ, Ooi PC, Sadri R, Talik NA, Yau ZY, Mohammad Haniff MAS, et al.
    Sci Rep, 2021 Aug 31;11(1):17432.
    PMID: 34465806 DOI: 10.1038/s41598-021-96909-0
    A new 2D titanium carbide (Ti3C2), a low dimensional material of the MXene family has attracted remarkable interest in several electronic applications, but its unique structure and novel properties are still less explored in piezoelectric energy harvesters. Herein, a systematic study has been conducted to examine the role of Ti3C2 multilayers when it is incorporated in the piezoelectric polymer host. The 0.03 g/L of Ti3C2 has been identified as the most appropriate concentration to ensure the optimum performance of the fabricated device with a generated output voltage of about 6.0 V. The probable reasons might be due to the uniformity of nanofiller distribution in the polyvinylidene difluoride (PVDF) and the incorporation of Ti3C2 in a polymer matrix is found to enhance the β-phase of PVDF and diminish the undesired α-phase configuration. Low tapping frequency and force were demonstrated to scavenge electrical energy from abundant mechanical energy resources particularly human motion and environmental stimuli. The fabricated device attained a power density of 14 µW.cm-2 at 10.8 MΩ of load resistor which is considerably high among 2D material-based piezoelectric nanogenerators. The device has also shown stable electrical performance for up to 4 weeks and is practically able to store energy in a capacitor and light up a LED. Hence, the Ti3C2-based piezoelectric nanogenerator suggests the potential to realize the energy harvesting application for low-power electronic devices.
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