The single-cell triboelectric nanogenerator (TENG) often produces insufficient energy, leading to the use of a multicellular TENG structure. This work experimented with and simulated a dual-cell TENG with various configurations in parallel and series arrangements. The working principle of charge generation during each phase of a contact-separation cycle was explained through the analysis and comparison of five electrical configurations of a dual-cell TENG. Our observations indicate that measuring the output charge of a TENG provides a more reliable performance comparison. Finally, multicellular TENG with four cells arranged in an X-shape (X-TENG), self-supporting structure is fabricated and further experimented with, validating our conjectures derived from a dual-cell TENG.
This study describes a novel fabrication technique to grow gold nanoparticles (AuNPs) directly on seeded ZnO sacrificial template/polymethylsilsesquioxanes (PMSSQ)/Si using low-temperature hydrothermal reaction at 80°C for 4 h. The effect of non-annealing and various annealing temperatures, 200°C, 300°C, and 400°C, of the ZnO-seeded template on AuNP size and distribution was systematically studied. Another PMMSQ layer was spin-coated on AuNPs to study the memory properties of organic insulator-embedded AuNPs. Well-distributed and controllable AuNP sizes were successfully grown directly on the substrate, as observed using a field emission scanning electron microscope followed by an elemental analysis study. A phase analysis study confirmed that the ZnO sacrificial template was eliminated during the hydrothermal reaction. The AuNP formation mechanism using this hydrothermal reaction approach was proposed. In this study, the AuNPs were charge-trapped sites and showed excellent memory effects when embedded in PMSSQ. Optimum memory properties of PMMSQ-embedded AuNPs were obtained for AuNPs synthesized on a seeded ZnO template annealed at 300°C, with 54 electrons trapped per AuNP and excellent current-voltage response between an erased and programmed device.