In this study, the unaffected, affected and heavily affected teeth were studied by using X-Ray diffraction method. The D-values, which are related to the crystallite size of the apatite crystals, were calculated according to the Sherrer equation. The crystallite size of unaffected enamel was found to be 1530.95Å, while the affected enamel was 1490.22Å and the heavily affected enamel was 1484.16Å respectively. This study showed that the unaffected enamel has greater crystallite size as compared to the affected and heavily affected enamel.
Unaffected, affected and heavily affected teeth enamel were studied by using FT-Raman spectroscopy. The 14 permanent teeth’s enamel surface were measured randomly, resulting in total n=43 FT-Raman spectra. The results obtained from FT-Raman spectra of heavily affected, affected and unaffected tooth’s enamel surfaces did not show any significant difference. In this study, Kruskal-Wallis and Wilcoxon rank sum tests were used to compare the intensity between the categories of enamel as well as the surfaces of teeth samples.
The most sensitive part of a metal-oxide-semiconductor (MOS) structure to ionizing radiation is the
oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates
electron/hole pairs. Oxide trapped charge causes a negative shift in capacitance-voltage (C-V)
characteristics. These changes are the results of, firstly, incre using trapped positive charge in the
oxide, which causes a parallel shift of the curve to more negative voltages, and secondly, increasing
interface trap density, which causes the curve to stretch-out.