Ca0.5Sr0.5Cu3Ti4O12 (CSCTO) ceramic oxide was prepared using solid state reaction technique. Impedance measurement was done using High Dielectric Resolution Analyzer (Novocontrol Novotherm) from 30 oC to 250 oC, in the frequency range of 10-2 to 106 Hz. X-ray diffraction pattern showed a single phase with a cubic structure. In the complex impedance plot, three semi-circles were observed; these represented the grain, grain boundary and electrode effect responses. The semi-circles were fitted using a series network of three parallel RC circuits. The resistance was found to increase with the decreasing temperature. The activation energies, Ea, obtained from the Arrhenius plots of CSCTO, were 0.31 eV and 0.73 eV for grain and grain boundary conductivity, respectively. The value of the grain energy was revealed as smaller than the grain boundary energy, due to the semi-conducting grain and the insulating grain boundary characteristic (Sinclair et al., 2002).
The computer, together with Lab View software, can be used as an automatic data acquisition system. This project deals with the development of a computer interfacing technique for the study of Hall Effect and converting the existing automation system into a Web-based automation system. The drive board RS 217-3611 with PCI 6025E card and stepper motor RS191-8340 with a resolution of 0.1mm, was used to move a pair of permanent magnets backward and forward against the sample. The General Interface Bus (GPIB) card interfaces, together with digital nano voltmeter and Tesla meter using serial port RS232 interface, are used for measuring the potential difference and magnetic field strength respectively. Hall Effect measurement on copper (Cu) and tantalum (Ta) showed negative and positive sign Hall coefficient. Therefore, the system has electron and hole charge carriers respectively at room temperature. The parameters such as drift velocity, conductivity, mobility, Hall Coefficient and charge carrier concentration were also automatically displayed on the front panel of Lab View programming and compared with standard value. The Web-based automation system can be remotely controlled and monitored by users in remote locations using only their web browsers. In addition, video conferencing through Net Meeting has been used to provide audio and video feedback to the client.
Quantum dots-sensitized solar cell (QDSSC) is one of the third generation solar cell that is
the most promising low cost, easy to manufacture and highly efficient solar cell. Compared to Dyesensitized
solar cell (DSSC), quantum dots (QDs) of QDSSC has a narrow bandgap and possess
excellent properties such as tunable band gaps, strong light absorption and high multiple electron
generation. Titanium dioxide or titania (TiO2) is an oxides semiconductor material that is frequently
used as a photoanode in this photovoltaic system due to high stability under visible light illumination.
TiO2 is also known as a good photocatalyst and an excellent choice in environmental purification. The
efficiencies of electron injection and light harvesting in QDSSC are affected by the nature, size
morphology, and quantity of this nanomaterial. In this review, the concept and principles of the
QDSSCs are reviewed. The preparation and fabrication method ofTiO2 electrode in QDSSC are also
discussed. It is worthwhile to know the architecture of TiO2 in order to enhance the efficiency of
QDSSC.
The non-linear refractive index of Ag nano-fluids prepared by γ-radiation method was investigated using a single beam z-scan technique. Under CW 532 nm laser excitation with power output of 40 mW, the Ag nano-fluids showed a large thermal-induced non-linear refractive index. In the present work it was determined that the non-linear refractive index for Ag nano-fluids is -4.80×10-8 cm2/W. The value of Δn0 was calculated to be -2.05×10-4. Our measurements also confirmed that the non-linear phenomenon was caused by the self-defocusing process making them good candidates for non linear optical devices.
Semiconductor thin films Copper Tin Selenide, Cu2SnSe3, a potential compound for solar cell applications or semiconductor radiation detector were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen N2, for 2 hours in a temperature range from 100˚C to 500˚C. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from Reitveld refinement show that the samples composed of Cu2SnSe3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain.
This studies are directed towards measuring the electrical conductivity of the (CuSe)1-xSex metal chalcogenide semi-conductor composites, with different stoichiometric compositions of Se (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8,1.0) in bulk form. The electrical conductivity measurement was carried out at room temperature, using the parallel plate technique. The (CuSe)1-xSex composites were prepared using solid state reaction, by varying the ratio of CuSe:Se, in the reaction mixture. The electrical conductivity of (CuSe)1-xSex was determined to be in the range of 1.17 x 10-8 to 1.02 x 10-1 S/cm. The finding indicated that the electrical conductivity value tended to decrease as the concentration of Se increased. The effect of the concentration of Se, on electrical conductivity of (CuSe)1-xSex composites, is discussed in this paper.
Tin selenide (SnSe) and copper indium diselenide (CuInSe2) compounds were synthesized by high temperature reaction method using combination of sealed ampoule (at relatively low pressure ~10-1 Pa without inert gas) and heating at specific temperature profile in rocking furnace. Powder X-Ray diffraction analysis showed that the products involved only single phases of SnSe and of CuInSe2 only. Using the reaction products as source materials, the SnSe and CuInSe2 thin films were vacuum-deposited on glass substrates at room temperature. Structural, elemental, surface morphological and optical properties of the as-deposited films were studied by X-Ray diffraction (XRD), energy dispersive X-Ray (EDX) analysis, field emission scanning electron microscopy (FESEM) and UV-Vis-NIR spectroscopy. Single phase of SnSe and CuInSe2 films were obtained by thermal evaporation technique from synthesized SnSe and CuInSe2 compound without further treatment.
Zinc selenide/graphene oxide (ZnSe/GO) composite is synthesized using hydrothermal method. Two different methods
such as direct and indirect route have been investigated to form the ZnSe/GO composite. In this research, the graphene
oxide used was in sheet and liquid form. The synthesized composite was then characterized using X-ray diffraction (XRD)
for phase identification, field emission scanning electron microscopy (FESEM) for morphology analysis and ultravioletvisible
spectroscopy (UV-Vis) for optical properties. ZnSe/GO composite showed absorption peak ranging from 460 to
480 nm with the optical band gap obtained through Tauc equation. The optical band gap of the ZnSe/GO composite has
been tuned down to a smaller value as compared to the bulk ZnSe compound. The optical band gap has been reduced
to around 2.53 eV when liquid graphene oxide was used while around 2.23 to 2.32 eV when graphene oxide sheet was
used. The purity of ZnSe/GO composite synthesis via indirect hydrothermal method is higher than those synthesized via
direct hydrothermal method. The type of graphene oxide will affect the morphology of the composite where the ZnSe
compound was either wrapped by tiny thorn-like substance or graphene oxide layer.
Zinc selenide (ZnSe) quantum dots (QDs) have been synthesized through a hydrothermal method using ZnCl2
and Na2
SeO3
powder as the precursor in the presence of oleylamine as capping agent. The hydrothermal route was conducted at a
moderate temperature (150°C) for 8 h. Optical properties of ZnSe QDs were studied through ultraviolet-visible spectroscopy
(UV-Vis) and photoluminescence (PL) while the structural properties of ZnSe QDs were characterized using transmission
electron microscope (TEM). The photoluminescence (PL) characterization on ZnSe QDs showed that the QDs emit light in
blue range region at around 440 nm with optical band gap energy at 3.68 eV. The TEM results showed that the average
particle size is around 8.9 nm. It is a good candidates for optoelectronic devices such as light emitting diodes (LED).