: The distinctive properties of graphene, characterized by its high carrier mobility and biocompatibility, have stimulated extreme scientific interest as a promising nanomaterial for future nanoelectronic applications. In particular, graphene-based transistors have been developed rapidly and are considered as an option for DNA sensing applications. Recent findings in the field of DNA biosensors have led to a renewed interest in the identification of genetic risk factors associated with complex human diseases for diagnosis of cancers or hereditary diseases. In this paper, an analytical model of graphene-based solution gated field effect transistors (SGFET) is proposed to constitute an important step towards development of DNA biosensors with high sensitivity and selectivity. Inspired by this fact, a novel strategy for a DNA sensor model with capability of single-nucleotide polymorphism detection is proposed and extensively explained. First of all, graphene-based DNA sensor model is optimized using particle swarm optimization algorithm. Based on the sensing mechanism of DNA sensors, detective parameters (Ids and Vgmin) are suggested to facilitate the decision making process. Finally, the behaviour of graphene-based SGFET is predicted in the presence of single-nucleotide polymorphism with an accuracy of more than 98% which guarantees the reliability of the optimized model for any application of the graphene-based DNA sensor. It is expected to achieve the rapid, quick and economical detection of DNA hybridization which could speed up the realization of the next generation of the homecare sensor system.
Graphene, which as a new carbon material shows great potential for a range of applications because of its exceptional electronic and mechanical properties, becomes a matter of attention in these years. The use of graphene in nanoscale devices plays an important role in achieving more accurate and faster devices. Although there are lots of experimental studies in this area, there is a lack of analytical models. Quantum capacitance as one of the important properties of field effect transistors (FETs) is in our focus. The quantum capacitance of electrolyte-gated transistors (EGFETs) along with a relevant equivalent circuit is suggested in terms of Fermi velocity, carrier density, and fundamental physical quantities. The analytical model is compared with the experimental data and the mean absolute percentage error (MAPE) is calculated to be 11.82. In order to decrease the error, a new function of E composed of α and β parameters is suggested. In another attempt, the ant colony optimization (ACO) algorithm is implemented for optimization and development of an analytical model to obtain a more accurate capacitance model. To further confirm this viewpoint, based on the given results, the accuracy of the optimized model is more than 97% which is in an acceptable range of accuracy.