A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications.
Hierarchical Si/ZnO trunk-branch nanostructures (NSs) have been synthesized by hot wire assisted chemical vapor deposition method for trunk Si nanowires (NWs) on indium tin oxide (ITO) substrate and followed by the vapor transport condensation (VTC) method for zinc oxide (ZnO) nanorods (NRs) which was laterally grown from each Si nanowires (NWs). A spin coating method has been used for zinc oxide (ZnO) seeding. This method is better compared with other group where they used sputtering method for the same process. The sputtering method only results in the growth of ZnO NRs on top of the Si trunk. Our method shows improvement by having the growth evenly distributed on the lateral sides and caps of the Si trunks, resulting in pine-leave-like NSs. Field emission scanning electron microscope image shows the hierarchical nanostructures resembling the shape of the leaves of pine trees. Single crystalline structure for the ZnO branch grown laterally from the crystalline Si trunk has been identified by using a lattice-resolved transmission electron microscope. A preliminary photoelectrochemical (PEC) cell testing has been setup to characterize the photocurrent of sole array of ZnO NR growth by both hydrothermal-grown (HTG) method and VTC method on ITO substrates. VTC-grown ZnO NRs showed greater photocurrent effect due to its better structural properties. The measured photocurrent was also compared with the array of hierarchical Si/ZnO trunk-branch NSs. The cell with the array of Si/ZnO trunk-branch NSs revealed four-fold magnitude enhancement in photocurrent density compared with the sole array of ZnO NRs obtain from VTC processes.
Silicon/zinc oxide (Si/ZnO) core-shell nanowires (NWs) were prepared on a p-type Si(111) substrate using a two-step growth process. First, indium seed-coated Si NWs (In/Si NWs) were synthesized using a plasma-assisted hot-wire chemical vapor deposition technique. This was then followed by the growth of a ZnO nanostructure shell layer using a vapor transport and condensation method. By varying the ZnO growth time from 0.5 to 2 h, different morphologies of ZnO nanostructures, such as ZnO nanoparticles, ZnO shell layer, and ZnO nanorods were grown on the In/Si NWs. The In seeds were believed to act as centers to attract the ZnO molecule vapors, further inducing the lateral growth of ZnO nanorods from the Si/ZnO core-shell NWs via a vapor-liquid-solid mechanism. The ZnO nanorods had a tendency to grow in the direction of [0001] as indicated by X-ray diffraction and high resolution transmission electron microscopy analyses. We showed that the Si/ZnO core-shell NWs exhibit a broad visible emission ranging from 400 to 750 nm due to the combination of emissions from oxygen vacancies in ZnO and In2O3 structures and nanocrystallite Si on the Si NWs. The hierarchical growth of straight ZnO nanorods on the core-shell NWs eventually reduced the defect (green) emission and enhanced the near band edge (ultraviolet) emission of the ZnO.
Electrochemical biosensors have shown great potential in the medical diagnosis field. The performance of electrochemical biosensors depends on the sensing materials used. ZnO nanostructures play important roles as the active sites where biological events occur, subsequently defining the sensitivity and stability of the device. ZnO nanostructures have been synthesized into four different dimensional formations, which are zero dimensional (nanoparticles and quantum dots), one dimensional (nanorods, nanotubes, nanofibers, and nanowires), two dimensional (nanosheets, nanoflakes, nanodiscs, and nanowalls) and three dimensional (hollow spheres and nanoflowers). The zero-dimensional nanostructures could be utilized for creating more active sites with a larger surface area. Meanwhile, one-dimensional nanostructures provide a direct and stable pathway for rapid electron transport. Two-dimensional nanostructures possess a unique polar surface for enhancing the immobilization process. Finally, three-dimensional nanostructures create extra surface area because of their geometric volume. The sensing performance of each of these morphologies toward the bio-analyte level makes ZnO nanostructures a suitable candidate to be applied as active sites in electrochemical biosensors for medical diagnostic purposes. This review highlights recent advances in various dimensions of ZnO nanostructures towards electrochemical biosensor applications.
This study aims to investigate the bending effects on the flexible wearable antenna by using copper nanowires and polydimethylsiloxane (PDMS). This project focuses on the bending effect on the proposed wearable antenna in the presence of skin tissue and at free space. The radiation characteristics were simulated and analyzed when the antenna was under flat and bent conditions. The performance result of return loss and radiation pattern (Efield and H-field) of proposed wearable antenna was analyzed. The material for the proposed antenna is designed to be flexible and wearable for the application of body-centric wireless communication (BCWCs) at the frequency of 2.45 GHz with the approval specifications of industrial, scientific and medical (ISM) band. Radiator for the proposed wearable antenna is fabricated using copper nanowire, and the antenna substrate is by using polydimethylsiloxane (PDMS). The performance result of the proposed wearable antenna was simulated by using CST microwave studio. From the simulated result for different bending angles, a conclusion was drawn that bending of structure can improve the impedance matching and return loss during the bent condition. However, the resonant frequency tends to shift as the antenna is bent up to 50°. At the critical angle of 70°, the frequency is shifted to a lower frequency.
Indium antimonide nanowires were synthesized by electrochemical deposition using anodic aluminum oxide template in the presence of gold film as conductive layers. Field emission scanning electron microscopy and energy dispersive X-ray spectrometry measurements were carried out to investigate the effect of adhesive insulated tape covered below the conductive layer. Results showed that the anodic aluminum oxide template covered with insulating tapes had better morphology with less presence of overgrown rough film on the topside of the anodic aluminum oxide template and it exhibited a smoother nanowire sidewall as compared to the uncovered ones. Additionally, the unique properties of anodic aluminum oxide were controllable pore diameter with a narrow size distribution at some intervals. It was evident from the energy dispersive X-ray spectrum that the nanowires synthesized from the covered template condition exhibited better InSb composition and stoichiometric ratio compared to the uncovered template condition.
Thermoelectric nanostructures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (e.g. from nuclear power plant, fossil fuel burning, automotives and household appliances). In this study, large-area vertically-aligned silicon nanowire (SiNW) arrays were synthesized in an aqueous solution containing AgN•i and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nanowire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of um. Te/Bi2Tex.Si thermoelectric core-shell nanostructures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTe02+ and 139' /HTe02+ ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. The surface-modified SiNWs of core-shell structures had roughened surface morphologies and, therefore, higher surface-to-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nanodevices. Growth study on the SiNWs and core-shell nanostructures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations.
Silicon nanowires were synthesized on Si substrates (111) via thermal evaporation using AuPd thin layer catalyst. Pre cleaned of Si wafer was used as a substrate to assemble the nanostructure products. In this work, the effect of growth temperature that ranging from 800 to 1000°C on the formation of silicon nanowires studied extensively. X-ray diffraction and field emission scanning electron microscope were employed to characterize the structures and morphology of nanowires. Vertical aligned silicon nanowires have been successfully grown on Si substrates at 900 and 1000°C. At 1100°C, the high aspect ratio of silicon nanowires can be produced but the formation density is low. The presence of AuPd catalyst on the tip of nanowires, it is expected that VLS is the most suitable to explain the growth mechanism of obtained SiNWs. The crystalline structure of SiNWs was proved by XRD data.
Detection and quantification of DNA is critical to many areas of life sciences and health care, from
disease diagnosis to drug screening. The transduction of DNA through electrochemical methods have a fast response rate and with a conductometric device like the silicon nanowire which can be fabricated to have a similar diameter of the DNA molecule being targeted, detection is real-time. Critical to this is the interfacing of a current-source and an amplifier capable of achieving a maximum of 10 pico ampere input bias. In this project, we fabricated a silicon nanowire using the top down approach and built a circuit that can mimic the output signal as low as 12 nA and achieved a gain of 1 million to be interfaced with the nanowire for real-time DNA detection.
In this study, low-bandgap polymer poly{[4,4-bis(2-ethylhexyl)-cyclopenta-(2,1-b;3,4-b')dithiophen]-2,6-diyl-alt-(2,1,3-benzothiadiazole)-4,7-diyl} (PCPDTBT) nanostructures have been synthesized via a hard nanoporous alumina template of centrifugal process. Centrifuge has been used to infiltrate the PCPDTBT solution into the nanoporous alumina by varying the rotational speeds. The rotational speed of centrifuge is directly proportional to the infiltration force that penetrates into the nanochannels of the template. By varying the rotational speed of centrifuge, different types of PCPDTBT nanostructures are procured. Infiltration force created during the centrifugal process has been found a dominant factor in tuning the morphological, optical, and structural properties of PCPDTBT nanostructures. The field emission scanning electron microscopy (FESEM) images proved the formation of nanotubes and nanowires. The energy-dispersive X-ray spectroscope (EDX) analysis showed that the nanostructures were composed of PCPDTBT with complete dissolution of the template.
Atomic force microscopy (AFM) lithography was applied to produce nanoscale pattern for silicon nanowire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nanopatterns. A conductive AFM tip was used to grow the silicon oxide nanopatterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nanowire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nanowire transistor structure has been investigated. A completed silicon nanowire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nanowire transistor consists of a silicon nanowire that acts as a channel with source and drain pads. A lateral gate pad with a nanowire head was fabricated very close to the channel in the formation of transistor structures.
Many techniques have been applied to fabricate nanostructures via top-down approach such as electron beam lithography. However, most of the techniques are very complicated and involves many process steps, high cost operation as well as the use of hazardous chemicals. Meanwhile, atomic force microscopy (AFM) lithography is a simple technique which is considered maskless and involves only an average cost and less complexity. In AFM lithography, the movement of a probe tip can be controlled to create nanoscale patterns on sample surface. For silicon nanowire (SiNW) fabrication, a conductive tip was operated in non-contact AFM mode to grow nanoscale oxide patterns on silicon-on-insulator (SOI) wafer surface based on local anodic oxidation (LAO) mechanism. The patterned structure was etched through two steps of wet etching processes. First, the TMAH was used as the etchant solution for Si removing. In the second step, diluted HF was used to remove oxide mask in order to produce a completed SiNW based devices. A SiNW based device which is formed by a nanowire channel, source and drain pads with lateral gate structures can be fabricated by well controlling the lithography process (applied tip voltage and writing speed) as well as the etching processes.
Annealing temperature plays an important role in the formation of an Au-Ga eutectic alloy. The effects of the annealing temperature on gold nanoparticles colloid and substrate surface were studied using AFM, FE-SEM and TEM. At 600oC, the layer of gold colloids particle formed an island in the state of molten eutectic alloy and absorbed evaporated metalorganics to formed nanowire (NW) underneath the alloy. Pit formed on the substrate surface due to the chemical reactions during the annealing process have an impact on the direction of growth of the NW. Without annealing, the NW formed vertically on the GaAs (100) surface. The growth direction depends on the original nucleation facets and surface energy when annealed. When annealed, the wire base is large and curved due to the migration of Ga atoms on the substrate surface towards the tip of the wire and the line tension between the substrate surface and gold particle.
An inexpensive single-step carbon-assisted thermal evaporation method for the growth of SnO2-core/ZnO-shell nanostructures is described, and the ethanol sensing properties are presented. The structure and phases of the grown nanostructures are investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. XRD analysis indicates that the core-shell nanostructures have good crystallinity. At a lower growth duration of 15 min, only SnO2 nanowires with a rectangular cross-section are observed, while the ZnO shell is observed when the growth time is increased to 30 min. Core-shell hierarchical nanostructures are present for a growth time exceeding 60 min. The growth mechanism for SnO2-core/ZnO-shell nanowires and hierarchical nanostructures are also discussed. The sensitivity of the synthesized SnO2-core/ZnO-shell nanostructures towards ethanol sensing is investigated. Results show that the SnO2-core/ZnO-shell nanostructures deposited at 90 min exhibit enhanced sensitivity to ethanol. The sensitivity of SnO2-core/ZnO-shell nanostructures towards 20 ppm ethanol gas at 400 °C is about ~5-times that of SnO2 nanowires. This improvement in ethanol gas response is attributed to high active sensing sites and the synergistic effect of the encapsulation of SnO2 by ZnO nanostructures.
In this article we present ultra-sensitive, silicon nanowire (SiNW)-based biosensor devices for the detection of disease biomarkers. An electrochemically induced functionalisation method has been employed to graft antibodies targeted against the prostate cancer risk biomarker 8-hydroxydeoxyguanosine (8-OHdG) to SiNW surfaces. The antibody-functionalised SiNW sensor has been used to detect binding of the 8-OHdG biomarker to the SiNW surface within seconds of exposure. Detection of 8-OHdG concentrations as low as 1 ng/ml (3.5 nM) has been demonstrated. The active device has been bonded to a disposable printed circuit which can be inserted into an electronic readout system as part of an integrated Point of Care (POC) diagnostic. The speed, sensitivity and ease of detection of biomarkers using SiNW sensors render them ideal for eventual POC diagnostics.
Ultrafine titanium dioxide (TiO2) nanowires were synthesised using a hydrothermal method with different volumes of ethylene glycol (EG) and annealing temperatures. It shows that sodium titanate nanowires synthesised using 5 and 10 ml EG, which annealed at 400°C produced TiO2 nanowires that correspond to a photochemically active phase, which is anatase. The influences of annealing temperatures (400-600°C) on the morphological arrangement of TiO2 nanowires were evident in the field emission scanning electron microscopy. The annealing temperature of 500°C led to agglomeration, which formed a mixture of TiO2 nanoparticles and nanowires. High thermal stability of TiO2 nanowires revealed by thermogravimetric analysis and Fourier transform infrared spectroscopy spectrum showed the presence of the Ti-O-Ti vibrations as evidenced due to TiO2 lattices. An antibacterial study using TiO2 nanowires toward Escherichia coli and Klebsiella pneumoniae showed large zones of inhibition that indicated susceptibility of the microbe toward TiO2. Growth kinetic analysis shows that addition of TiO2 has reduced optical density (OD) suggesting an inhibition of the growth of bacteria. These results indicate TiO2 nanowires can be effectively used as an antimicrobial agent against gram-bacteria. The TiO2 nanowires could be exploited in the medical, packaging and detergent formulation industries and wastewater treatment.
Nanowire sensors offer great potential as highly sensitive electrochemical and electronic biosensors because of their small size, high aspect ratios, and electronic properties. Nevertheless, the available methods to fabricate carbon nanowires in a controlled manner remain limited to expensive techniques. This paper presents a simple fabrication technique for sub-100 nm suspended carbon nanowire sensors by integrating electrospinning and photolithography techniques. Carbon Microelectromechanical Systems (C-MEMS) fabrication techniques allow fabrication of high aspect ratio carbon structures by patterning photoresist polymers into desired shapes and subsequent carbonization of resultant structures by pyrolysis. In our sensor platform, suspended nanowires were deposited by electrospinning while photolithography was used to fabricate support structures. We have achieved suspended carbon nanowires with sub-100 nm diameters in this study. The sensor platform was then integrated with a microfluidic chip to form a lab-on-chip device for label-free chemiresistive biosensing. We have investigated this nanoelectronics label-free biosensor's performance towards bacterial sensing by functionalization with Salmonella-specific aptamer probes. The device was tested with varying concentrations of Salmonella Typhimurium to evaluate sensitivity and various other bacteria to investigate specificity. The results showed that the sensor is highly specific and sensitive in detection of Salmonella with a detection limit of 10 CFU mL-1. Moreover, this proposed chemiresistive assay has a reduced turnaround time of 5 min and sample volume requirement of 5 µL which are much less than reported in the literature.
Diabetes is a metabolic disease with a prolonged elevated level of glucose in the blood leads to long-term complications and increases the chances for cardiovascular diseases. The present study describes the fabrication of a ZnO nanowire (NW)-modified interdigitated electrode (IDE) to monitor the level of blood glucose. A silver IDE was generated by wet etching-assisted conventional lithography, with a gap between adjacent electrodes of 98.80 μm. The ZnO-based thin films and NWs were amended by sol-gel and hydrothermal routes. High-quality crystalline and c-axis orientated ZnO thin films were observed by XRD analyses. The ZnO thin film was annealed for 1, 3 and 5 h, yielding a good-quality crystallite with sizes of 50, 100 and 110 nm, and the band gaps were measured as 3.26, 3.20 and 3.17 eV, respectively. Furthermore, a flower-modeled NW was obtained with the lowest diameter of 21 nm. Our designed ZnO NW-modified IDE was shown to have a detection limit as low as 0.03 mg/dL (correlation coefficient = 0.98952) of glucose with a low response time of 3 s, perform better than commercial glucose meter, suitable to instantly monitor the glucose level of diabetes patients. This study demonstrated the high performance of NW-mediated IDEs for glucose sensing as alternative to current glucose sensors.
Improving the stability of cuprous oxide (Cu2 O) is imperative to its practical applications in artificial photosynthesis. In this work, Cu2 O nanowires are encapsulated by metal-organic frameworks (MOFs) of Cu3 (BTC)2 (BTC=1,3,5-benzene tricarboxylate) using a surfactant-free method. Such MOFs not only suppress the water vapor-induced corrosion of Cu2 O but also facilitate charge separation and CO2 uptake, thus resulting in a nanocomposite representing 1.9 times improved activity and stability for selective photocatalytic CO2 reduction into CH4 under mild reaction conditions. Furthermore, direct transfer of photogenerated electrons from the conduction band of Cu2 O to the LUMO level of non-excited Cu3 (BTC)2 has been evidenced by time-resolved photoluminescence. This work proposes an effective strategy for CO2 conversion by a synergy of charge separation and CO2 adsorption, leading to the enhanced photocatalytic reaction when MOFs are integrated with metal oxide photocatalyst.
One-dimensional nanostructure materials are very attractive because of their electronic and optical properties depending on their size. It is well known that properties of material can be tuned by reducing size to nanoscale because at the small sizes, that they behave differently with its bulk materials and the band gap will control by the size. The tunability of the band gap makes nanostructured materials useful for many applications. As one of the wide band gaps semiconductor compounds, zinc selenide (ZnSe) nanostructures (nanoparticles, nanowires, nanorods) have received much attention for the application in optoelectronic devices, such as blue laser diode, light emitting diodes, solar cells and IR optical windows. In this study, ZnSe nanostructures have been synthesized by reduction process of zinc selenate using hydrazine hydrate (N2H4.2H2O). The reductive agent of hydrazine hydrate was added to the starting materials of zinc selenate were heat treated at 500 o C for 1 hour under argon flow to form onedimensional nanostructures. The SEM and TEM images show the formation of nanocompositelike structures, which some small nanobars and nanopellets stick to the rod. The x-ray diffraction and elemental composition analysis confirm the formation of mixture zinc oxide and zinc selenide phases.