In this paper, we examine the impact of the precursor's mixing temperature and mixing protocol on the crystal structure and morphological and optical properties of Cu2ZnSnS4 (CZTS) thin films. Four samples of CZTS thin films were synthesized with the sol-gel spin coating technique by previously mixing precursors at (a) 150 °C and (b) room temperature (RT), either (i) all at once or (ii) through sequential adding the individual chemicals 30 min apart. SEM-EDX, XRD, Raman and Visible spectroscopy analysis showed that sample 150°C-ST (chemicals mixed at the same time at 150 °C) fulfilled all the theoretical stoichiometric criteria (poor in Cu, rich in Zn) for the high-quality CZTS absorbers. The larger grain size (850 nm) and crystallite size (73.96 nm), lower strain (0.49×10-3) and band gap Eg=1.44eV which is closest to the Shockley-Queisser limit for single junction solar cells (1.34 eV).
In this study, we investigated the pathways for integration of perovskite and silicon solar cells through variation of the properties of the interconnecting layer (ICL). The user-friendly computer simulation software wxAMPS was used to conduct the investigation. The simulation started with numerical inspection of the individual single junction sub-cell, and this was followed by performing an electrical and optical evaluation of monolithic 2T tandem PSC/Si, with variation of the thickness and bandgap of the interconnecting layer. The electrical performance of the monolithic crystalline silicon and CH3NH3PbI3 perovskite tandem configuration was observed to be the best with the insertion of a 50 nm thick (Eg ≥ 2.25 eV) interconnecting layer, which directly contributed to the optimum optical absorption coverage. These design parameters improved the optical absorption and current matching, while also enhancing the electrical performance of the tandem solar cell, which benefited the photovoltaic aspects through lowering the parasitic loss.
The critical impact of sodium-doped molybdenum (MoNa) in shaping the MoSe2 interfacial layer, influencing the electrical properties of CIGSe/Mo heterostructures, and achieving optimal MoSe2 formation conditions, leading to improved hetero-contact quality. Notably, samples with a 600-nm-thick MoNa layer demonstrate the highest resistivity (73 μΩcm) and sheet resistance (0.45 Ω/square), highlighting the substantial impact of MoNa layer thickness on electrical conductivity. Controlled sodium diffusion through MoNa layers is essential for achieving desirable electrical characteristics, influencing Na diffusion rates, grain sizes, and overall morphology, as elucidated by EDX and FESEM analyses. Additionally, XRD results provide insights into the spontaneous peeling-off phenomenon, with the sample featuring a ~ 600-nm MoNa layer displaying the strongest diffraction peak and the largest crystal size, indicative of enhanced Mo to MoSe2 conversion facilitated by sodium presence. Raman spectra further confirm the presence of MoSe2, with its thickness correlating with MoNa layer thickness. The observed increase in resistance and decrease in conductivity with rising MoSe2 layer thickness underscore the critical importance of optimal MoSe2 formation for transitioning from Schottky to ohmic contact in CIGSe/Mo heterostructures. Ultimately, significant factors to the advancement of CIGSe thin-film solar cell production are discussed, providing nuanced insights into the interplay of MoNa and MoSe2, elucidating their collective impact on the electrical characteristics of CIGSe/Mo heterostructures.
The conventional electron transport layer (ETL) TiO2 has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO2 ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn2+ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.
The silicon heterojunction solar cell (SHJ) is considered the dominant state-of-the-art silicon solar cell technology due to its excellent passivation quality and high efficiency. However, SHJ's light management performance is limited by its narrow optical absorption in long-wave near-infrared (NIR) due to the front, and back tin-doped indium oxide (ITO) layer's free carrier absorption and reflection losses. Despite the light-trapping efficiency (LTE) schemes adopted by SHJ in terms of back surface texturing, the previous investigations highlighted the ITO layer as a reason for an essential long-wavelength light loss mechanism in SHJ solar cells. In this study, we propose the use of Molybdenum disulfide (MoS2) as a way of improving back-reflection in SHJ. The text presents simulations of the optical response in the backside of the SHJ applying the Monte-Carlo raytracing method with a web-based Sunsolve high-precision raytracing tool. The solar cells' electrical parameters were also resolved using the standard electrical equivalent circuit model provided by Sunsolve. The proposed structure geometry slightly improved the SHJ cell optical current density by ~0.37% (rel.), and hence efficiency (η) by about 0.4% (rel.). The SHJ cell efficiency improved by 21.68% after applying thinner back ITO of about 30 nm overlayed on ~1 nm MoS2. The efficiency improvement following the application of MoS2 is tentatively attributed to the increased NIR absorption in the silicon bulk due to the light constructive interface with the backside components, namely silver (Ag) and ITO. Study outcomes showed that improved SHJ efficiency could be further optimized by addressing front cell components, mainly front ITO and MoS2 contact engineering.