Triboelectric nanogenerators (TENGs) have been developed as promising energy-harvesting devices to effectively convert mechanical energy into electricity. TENGs use either organic or inorganic materials to initiate the triboelectrification process, followed by charge separation. In this study, a high-performance composite-based triboelectric nanogenerator (CTENG) device was fabricated, comprising polydimethylsiloxane (PDMS) as a polymeric matrix, barium titanite (BTO) nanopowders as dielectric fillers, and graphene quantum dots (GQDs) as conductive media. The PDMS/BTO/GQD composite film was prepared with GQDs doped into the mixture of PDMS/BTO and mechanically stirred. The composition of the GQD varied from 0 to 40 wt %. The composite was spin-coated onto flexible ITO on a PET sheet and dried in an oven at 80 °C for 24 h. The output performance of TENGs is enhanced by the increased concentration of 30 wt % GQD, which is 2 times higher than nanocomposite films without GQD. The PDMS/BTO/G30 TENG film depicted an increase in open-circuit voltage output (VOC), short-circuit current output (ISC), and power density reaching ∼310.0 V, ∼23.0 μA, and 1.6 W/m2, respectively. The simple and scalable process for the PDMS/BTO/GQD TENGs would benefit as a sustainable energy-harvesting system in small electronic devices.
We report a viable method to produce nanocrystalline graphene films on polycrystalline nickel (Ni) with enhanced N doping at low temperatures by a cold-wall plasma-assisted chemical vapor deposition (CVD) method. The growth of nanocrystalline graphene films was carried out in a benzene/ammonia/argon (C6H6/NH3/Ar) system, in which the temperature of the substrate heated by Joule heating can be further lowered to 100 °C to achieve a low sheet resistance of 3.3 kΩ sq-1 at a high optical transmittance of 97.2%. The morphological, structural, and electrical properties and the chemical compositions of the obtained N-doped nanocrystalline graphene films can be tailored by controlling the growth parameters. An increase in the concentration of atomic N from 1.42 to 11.28 atomic percent (at.%) is expected due to the synergetic effects of a high NH3/Ar ratio and plasma power. The possible growth mechanism of nanocrystalline graphene films is also discussed to understand the basic chemical reactions that occur at such low temperatures with the presence of plasma as well as the formation of pyridinic-N- and pyrrolic-N-dominated nanocrystalline graphene. The realization of nanocrystalline graphene films with enhanced N doping at 100 °C may open great potential in developing future transparent nanodevices.